2SB071000L
TRANS PNP 25V 0.5A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single Bipolar Transistors
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Panasonic Electronic Components PNP Bipolar Junction Transistor (BJT) with part number 2SB071000L. This device features a 25V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a transition frequency of 200MHz and a maximum power dissipation of 200mW. The DC current gain (hFE) is a minimum of 85 at 150mA and 10V. Designed for surface mounting, it is supplied in a Mini3-G1 package (TO-236-3, SC-59, SOT-23-3) and is available on tape and reel. Typical applications include general switching and amplification circuits across various industrial electronics sectors. Collector cutoff current is specified at 100nA (ICBO), and Vce(sat) is a maximum of 600mV at 30mA collector current and 3mA base current. The maximum operating junction temperature is 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 150mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 200 mW |
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