UP04878G0L
MOSFET 2N-CH 50V 0.1A SSMINI6Manufacturer: Panasonic Electronic Components
Categories: FET, MOSFET Arrays
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Panasonic Electronic Components UP04878G0L is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 100mA at 25°C. The device offers a low Rds On of 12 Ohms maximum at 10mA and 4V Vgs, with a logic level gate for enhanced compatibility. With a maximum power dissipation of 125mW and an operating temperature up to 125°C (TJ), it is suitable for compact designs. The SSMini6-F2 package, a surface mount configuration, is utilized for its space-saving attributes. This MOSFET array finds application in portable electronics, power management circuits, and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 125°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 125mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Input Capacitance (Ciss) (Max) @ Vds | 12pF @ 3V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1µA |
| Supplier Device Package | SSMini6-F2 |
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