FC8V33030L
MOSFET 2N-CH 33V 6.5A WMINI8Manufacturer: Panasonic Electronic Components
Categories: FET, MOSFET Arrays
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Panasonic Electronic Components FC8V33030L is a dual N-channel MOSFET array designed for high-density surface-mount applications. This component features a 33V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.5A at 25°C. Optimized for efficiency, it offers a low on-resistance (Rds On) of 20mOhm at 3.3A and 10V Vgs. The logic-level gate is a key feature, enabling compatibility with lower gate drive voltages. With a maximum power dissipation of 1W and an operating temperature up to 150°C (TJ), the FC8V33030L is suitable for demanding applications in automotive and industrial sectors. The WMini8-F1 package provides a compact footprint for space-constrained designs, supplied on tape and reel. Key electrical characteristics include a maximum gate charge (Qg) of 3.8nC at 4.5V and an input capacitance (Ciss) of 360pF at 10V.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 33V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 480µA |
| Supplier Device Package | WMini8-F1 |
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