FC6946010R
MOSFET 2N-CH 60V 0.1A SSMINI6Manufacturer: Panasonic Electronic Components
Categories: FET, MOSFET Arrays
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Panasonic Electronic Components, MOSFET Array, FC6946010R. This dual N-channel MOSFET features a 60V drain-source voltage and 100mA continuous drain current. Designed with a logic level gate, it offers a low on-resistance of 12 Ohm maximum at 10mA, 4V. The component has a maximum power dissipation of 125mW and an input capacitance of 12pF at 3V. It is housed in a compact SSMini6-F3-B (SOT-563, SOT-666) package suitable for surface mounting and operates at a maximum junction temperature of 150°C. This device is commonly employed in portable electronics and consumer devices.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 125mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Input Capacitance (Ciss) (Max) @ Vds | 12pF @ 3V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1µA |
| Supplier Device Package | SSMini6-F3-B |
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