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XN0A55400L

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XN0A55400L

TRANS 2NPN 40V 0.1A MINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Panasonic Electronic Components XN0A55400L is a dual NPN bipolar junction transistor (BJT) array. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 450MHz and a power dissipation of 300mW. The device exhibits a minimum DC current gain (hFE) of 60 at 10mA and 1V, with a Vce saturation of 250mV at 1mA collector current and 10mA base current. The collector cutoff current (ICBO) is a maximum of 100nA. The XN0A55400L is supplied in a MINI6-G1 package, suitable for surface mounting, and is delivered on tape and reel. This component finds application in various electronic designs, including consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 1V
Frequency - Transition450MHz
Supplier Device PackageMINI6-G1

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