Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays

XN0654300L

Banner
productimage

XN0654300L

TRANS 2NPN 10V 0.065A MINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Panasonic Electronic Components XN0654300L is a bipolar junction transistor (BJT) array featuring two NPN transistors in a single MINI6-G1 package (SOT-23-6). This device offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. With a transition frequency of 8.5GHz, it is suitable for high-speed switching and amplification applications. The minimum DC current gain (hFE) is 50 at 20mA and 8V. It operates at a maximum junction temperature of 150°C and has a power dissipation rating of 200mW. The XN0654300L is supplied on tape and reel (TR) and finds application in telecommunications, consumer electronics, and industrial control systems requiring compact, high-performance switching and amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Power - Max200mW
Current - Collector (Ic) (Max)65mA
Voltage - Collector Emitter Breakdown (Max)10V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 8V
Frequency - Transition8.5GHz
Supplier Device PackageMINI6-G1

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
DME20C010R

TRANS NPN/PNP DARL 50V MINI5

product image
XP0555300L

TRANS 2NPN 100V 0.02A SMINI6

product image
XP0654300L

TRANS 2NPN 10V 0.065A SMINI6