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Bipolar Transistor Arrays, Pre-Biased

XP0621100L

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XP0621100L

TRANS PREBIAS DUAL NPN SMINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

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Panasonic Electronic Components XP0621100L is a pre-biased bipolar transistor array featuring two NPN transistors. This dual transistor is configured with integrated base resistors, offering typical values of 10 kOhms for both R1 and R2. It supports a collector-emitter breakdown voltage of 50V and a continuous collector current of up to 100mA. The device exhibits a transition frequency of 150MHz and a maximum power dissipation of 150mW. The minimum DC current gain (hFE) is 35 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is 250mV typical at 300µA base current and 10mA collector current. The XP0621100L is housed in a SMINI6-G1 package, a 6-lead surface mount configuration compatible with SMINI6-G1 and 6-TSSOP, SC-88, SOT-363 footprints. This component is commonly utilized in digital logic circuits and switching applications across various industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Frequency - Transition150MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Supplier Device PackageSMINI6-G1

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