Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays, Pre-Biased

XP0421100L

Banner
productimage

XP0421100L

TRANS PREBIAS DUAL NPN SMINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Panasonic Electronic Components XP0421100L is a dual NPN pre-biased bipolar transistor array. This SMINI6-G1 packaged component features two independent NPN transistors with integrated base resistors, simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is 150MHz, suitable for various signal amplification and switching applications. Key parameters include a minimum DC current gain (hFE) of 35 at 5mA, 10V, and a saturation voltage of 250mV at 300µA, 10mA. The device is supplied in a 150mW power rating and a 6-TSSOP, SC-88, SOT-363 equivalent SMINI6-G1 surface mount package, delivered on tape and reel. Typical applications span consumer electronics, industrial control, and telecommunications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Frequency - Transition150MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Supplier Device PackageSMINI6-G1

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy