XP0411600L
TRANS PREBIAS DUAL PNP SMINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components XP0411600L is a dual PNP pre-biased bipolar transistor. This device features two PNP transistors integrated within a single SMINI6-G1 package, suitable for surface mount applications. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. With a transition frequency of 80MHz and a power dissipation of 150mW, this component is designed for general-purpose switching and amplification. The internal base resistor is specified at 4.7kOhms. Typical applications include logic circuits, driver circuits, and signal conditioning in consumer electronics and industrial automation. The component is supplied on Tape & Reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | 80MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SMINI6-G1 |
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