XP0411500L
TRANS PREBIAS DUAL PNP SMINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components XP0411500L is a dual PNP pre-biased bipolar transistor (BJT) housed in a SMINI6-G1 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features an 80MHz transition frequency and a power dissipation of 150mW. The integrated base resistors include a 10kOhm value (R1). The transistor exhibits a minimum DC current gain (hFE) of 160 at 5mA and 10V, with a Vce saturation of 250mV at 300µA and 10mA. Applications for this component span across industrial automation, consumer electronics, and telecommunications equipment. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | 80MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SMINI6-G1 |
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