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Bipolar Transistor Arrays, Pre-Biased

XP0411100L

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XP0411100L

TRANS PREBIAS DUAL PNP SMINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

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Panasonic Electronic Components XP0411100L is a dual PNP pre-biased bipolar transistor array. This SMINI6-G1 packaged component provides two independent PNP transistors, each with integrated base resistors (R1 and R2) of 10 kOhms for simplified circuit design. It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is rated at 80MHz, with a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce. Saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. With a maximum power dissipation of 150mW, this surface-mount device is suitable for applications in industrial control, consumer electronics, and communication systems. It is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Frequency - Transition80MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Supplier Device PackageSMINI6-G1

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