XN0F25600L
TRANS PREBIAS DUAL NPN MINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components XN0F25600L is a dual NPN pre-biased bipolar transistor array. This component features two NPN transistors integrated within a single MINI6-G1 package, suitable for surface mount applications. It offers a collector current (Ic) capability of up to 600mA and a collector-emitter breakdown voltage (Vce) of 20V. The device provides a minimum DC current gain (hFE) of 100 at 50mA and 5V, with a transition frequency of 200MHz. The integrated base resistors are specified at 4.7kOhms. Dissipation is limited to 300mW. This transistor array is commonly utilized in consumer electronics, industrial automation, and telecommunications equipment for switching and amplification functions. The XN0F25600L is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | MINI6-G1 |
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