XN04A8800L
TRANS PNP PREBIAS/NPN 0.3W MINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components XN04A8800L is a pre-biased bipolar transistor array featuring one PNP and one NPN transistor. This SOT-23-6 (MINI6-G1) packaged device offers a collector-emitter breakdown voltage of 50V. The NPN transistor provides a typical DC current gain (hFE) of 150 at 2mA, 10V, and a transition frequency of 80MHz, with a collector current capability of 100mA and a maximum power dissipation of 300mW. The PNP transistor exhibits a DC current gain of 20 at 5mA, 10V, and a transition frequency of 100MHz. Both transistors have a base-emitter resistor (R2) value of 4.7 kOhms. This component is suitable for surface mount applications and is supplied in Tape & Reel (TR). It finds use in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 PNP Pre-Biased, 1 NPN |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA, 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V / 150 @ 2mA, 10V |
| Frequency - Transition | 100MHz, 80MHz |
| Resistor - Base (R1) | - |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | MINI6-G1 |
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