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Bipolar Transistor Arrays, Pre-Biased

XN0438100L

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XN0438100L

TRANS NPN/PNP PREBIAS 0.3W MINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Panasonic Electronic Components XN0438100L is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a MINI6-G1 (SOT-23-6) surface mount package. This component offers collector-emitter breakdown voltages of 50V. The NPN transistor provides a collector current (Ic) of up to 100mA with a transition frequency (fT) of 150MHz, while the PNP transistor supports up to 500mA and an fT of 200MHz. DC current gain (hFE) is specified as a minimum of 80 @ 5mA, 10V for the NPN and 50 @ 100mA, 10V for the PNP. Internal base resistors are 47kOhms (NPN) and 4.7kOhms (PNP), with an emitter base resistor of 4.7kOhms for both. Maximum power dissipation is 300mW. This device is commonly utilized in industrial and consumer electronics applications requiring compact switching and logic functions. It is supplied on Tape & Reel (TR).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA / 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max)500nA, 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 50 @ 100mA, 10V
Frequency - Transition150MHz, 200MHz
Resistor - Base (R1)47kOhms, 4.7kOhms
Resistor - Emitter Base (R2)4.7kOhms
Supplier Device PackageMINI6-G1

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