XN0421L00L
TRANS PREBIAS DUAL NPN MINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components XN0421L00L is a dual NPN pre-biased bipolar junction transistor (BJT) in a MINI6-G1 surface mount package. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features built-in base resistors (R1) of 4.7kOhms and emitter base resistors (R2) of 4.7kOhms, simplifying circuit design. The device exhibits a minimum DC current gain (hFE) of 20 at 5mA collector current and 10V collector-emitter voltage, with a transition frequency of 150MHz. Maximum power dissipation is rated at 300mW. The XN0421L00L is suitable for applications in consumer electronics and industrial control systems. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | MINI6-G1 |
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