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Bipolar Transistor Arrays, Pre-Biased

XN0421400L

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XN0421400L

TRANS PREBIAS DUAL NPN MINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

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Panasonic Electronic Components XN0421400L is a dual NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This MINI6-G1 packaged component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Featuring integrated base resistors of 10kOhms (R1) and 47kOhms (R2), this transistor array simplifies circuit design by eliminating the need for external biasing components. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA, 10V, and a transition frequency of 150MHz. With a maximum power dissipation of 300mW and a Vce saturation of 250mV at 300µA, 10mA, it is suitable for general-purpose switching and amplification in consumer electronics and industrial control systems. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition150MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageMINI6-G1

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