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Bipolar Transistor Arrays, Pre-Biased

XN0121400L

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XN0121400L

TRANS 2NPN PREBIAS 0.3W MINI5

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

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Panasonic Electronic Components XN0121400L is a dual NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features an integrated base resistor, simplifying circuit design and reducing component count in digital logic applications. The XN0121400L offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 150MHz and a power dissipation of 300mW, it is suitable for signal switching and amplification in various electronic systems. The Mini5-G1 package, equivalent to SC-74A or SOT-753, is provided in Tape & Reel (TR) packaging. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 5mA/10V and a saturation voltage (Vce(sat)) of 250mV at 300µA/10mA. The internal resistors are R1 at 10kOhms and R2 at 47kOhms, with a collector cutoff current (Icbo) of 500nA. This transistor array is often utilized in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74A, SOT-753
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition150MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageMini5-G1

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