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Bipolar Transistor Arrays, Pre-Biased

UP0439000L

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UP0439000L

TRANS PREBIAS NPN/PNP SSMINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Panasonic Electronic Components UP0439000L is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This SSMINI6-F1 packaged component offers a collector current of 100mA and a collector-emitter breakdown voltage of 50V. The device exhibits a DC current gain (hFE) of 80 minimum at 5mA, 10V. Transition frequencies are specified at 150MHz for the NPN and 80MHz for the PNP. The integrated base resistors are 47kOhms (R1) and 47kOhms (R2) for the NPN, and 10kOhms (R1) for the PNP. Maximum power dissipation is 125mW. The SOT-563, SOT-666 package is supplied on tape and reel (TR). This component finds application in various electronic circuits including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max125mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition150MHz, 80MHz
Resistor - Base (R1)47kOhms, 10kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageSSMINI6-F1

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