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Bipolar Transistor Arrays, Pre-Biased

UP0431100L

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UP0431100L

TRANS PREBIAS NPN/PNP SSMINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

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Panasonic Electronic Components UP0431100L is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a single SSMINI6-F1 surface mount package. This dual transistor configuration offers integrated base resistors (10kOhms for R1, 10kOhms for R2) simplifying circuit design and reducing component count. The transistors provide a collector current capability of up to 100mA and a collector-emitter breakdown voltage of 50V. Key performance characteristics include a maximum power dissipation of 125mW, a saturation voltage (Vce(sat)) of 250mV at 300µA/10mA, and a minimum DC current gain (hFE) of 35 at 5mA/10V. The transition frequencies are 150MHz for the NPN and 80MHz for the PNP. This component is suitable for applications in consumer electronics and industrial control systems where space and component integration are critical. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max125mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Frequency - Transition150MHz, 80MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Supplier Device PackageSSMINI6-F1

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