UP0421600L
TRANS PREBIAS DUAL NPN SSMINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components UP0421600L is a dual NPN pre-biased bipolar transistor array. This SSMINI6-F1 packaged component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 150MHz and a power dissipation of 125mW. The device includes an integrated base resistor (R1) of 4.7kOhms, simplifying circuit design. Saturation voltage is specified at a maximum of 250mV at 300µA base current and 10mA collector current. This component is suitable for surface mounting and is supplied on tape and reel. Applications include general-purpose digital logic, switching circuits, and amplification stages in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SSMINI6-F1 |
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