UP04215G0L
TRANS PREBIAS DUAL NPN SSMINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components UP04215G0L is a dual NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This SSMini6-F2 packaged device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It provides a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The transistor features a transition frequency of 150MHz and a maximum power dissipation of 125mW. The internal base resistance is specified at 10kOhms. This component is suitable for use in industrial and consumer electronics, particularly in switching and amplification circuits where space and performance are critical. The UP04215G0L is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SSMini6-F2 |
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