UP04211G0L
TRANS PREBIAS DUAL NPN SSMINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components UP04211G0L is a dual NPN pre-biased bipolar transistor array. This device features two NPN transistors in a single SSMini6-F2 package, suitable for surface mounting. It operates with a collector-emitter breakdown voltage of up to 50V and a maximum collector current of 100mA. The transition frequency is rated at 150MHz, with a power dissipation of 125mW. The integrated base resistors are specified as 10kOhms for both R1 and R2. Typical DC current gain (hFE) is a minimum of 35 at 5mA collector current and 10V Vce. Saturation voltage (Vce) is a maximum of 250mV at 300µA base current and 10mA collector current. The device is supplied on a tape and reel. Applications include signal switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SSMini6-F2 |