UP04210G0L
TRANS PREBIAS DUAL NPN SSMINI5Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components UP04210G0L is a dual NPN pre-biased bipolar junction transistor (BJT) housed in an SSMini6-F2 package. This surface mount device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 150MHz and a power dissipation of 125mW. The internal base resistor (R1) is rated at 47kOhms. This component is suitable for applications requiring precise switching and amplification, commonly found in consumer electronics and industrial control systems. The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V Vce. The collector cutoff current is a maximum of 500nA. The Vce saturation voltage is a maximum of 250mV at 300µA base current and 10mA collector current. The UP04210G0L is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SSMini6-F2 |
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