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Bipolar Transistor Arrays, Pre-Biased

UP04113G0L

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UP04113G0L

TRANS PREBIAS DUAL PNP SSMINI5

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

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Panasonic Electronic Components UP04113G0L is a pre-biased bipolar transistor featuring two PNP elements in a dual configuration. This device operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is rated at 80MHz, with a maximum power dissipation of 125mW. It includes integrated base resistors of 47kOhms (R1) and 47kOhms (R2). The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce) is a maximum of 250mV at 300µA base current and 10mA collector current. The UP04113G0L is supplied in an SSMini6-F2 package suitable for surface mounting and is delivered on tape and reel. This component finds application in various electronic systems, including digital logic circuits and signal amplification stages.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max125mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition80MHz
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageSSMini6-F2

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