UP04112G0L
TRANS PREBIAS DUAL PNP SSMINI5Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components UP04112G0L is a dual PNP pre-biased bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components. This device features integrated base resistors (R1=22kO, R2=22kO) for simplified circuit design. The UP04112G0L operates with a collector-emitter breakdown voltage of up to 50V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V Vce. The transition frequency is 80MHz, with a maximum power dissipation of 125mW. This surface-mount component is supplied in the SSMini6-F2 package, compatible with SOT-563 and SOT-666 footprints, and is delivered on tape and reel. Applications include general-purpose switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | 80MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SSMini6-F2 |
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