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Bipolar Transistor Arrays, Pre-Biased

UP0411200L

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UP0411200L

TRANS PREBIAS DUAL PNP SSMINI6

Manufacturer: Panasonic Electronic Components

Categories: Bipolar Transistor Arrays, Pre-Biased

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Panasonic Electronic Components UP0411200L is a dual PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features two independent PNP transistors integrated within a single SSMINI6-F1 package, which corresponds to SOT-563 and SOT-666 footprints. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device boasts a transition frequency of 80MHz and a maximum power dissipation of 125mW. Each pre-biased transistor includes internal base resistors (R1) of 22kOhms and emitter base resistors (R2) of 22kOhms, simplifying circuit design by eliminating the need for external biasing components. Saturation voltage is specified at 250mV maximum for a collector current of 10mA and base current of 300µA. The minimum DC current gain (hFE) is 60 at 5mA collector current and 10V Vce. This transistor array is commonly employed in industrial automation, consumer electronics, and communication systems where space-constrained, simplified logic switching and amplification are required. The UP0411200L is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max125mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Frequency - Transition80MHz
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device PackageSSMINI6-F1

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