UP04111G0L
TRANS PREBIAS DUAL PNP SSMINI5Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components UP04111G0L is a dual PNP pre-biased bipolar junction transistor (BJT) in a SSMini6-F2 package. This surface mount device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Featuring integrated base resistors of 10kOhms (R1) and 10kOhms (R2), it simplifies circuit design for applications requiring pre-biased transistor functionality. The UP04111G0L exhibits a transition frequency of 80MHz and a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce. Power dissipation is rated at 125mW. This component is commonly utilized in industrial, consumer electronics, and automotive applications where compact, pre-biased switching and amplification are needed. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | 80MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SSMini6-F2 |
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