NP0G3D200A
TRANS PREBIAS NPN/PNP SSSMINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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Panasonic Electronic Components NP0G3D200A is a dual pre-biased bipolar transistor featuring one NPN and one PNP configuration within a SSSMini6-F1 package. This surface mount device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA. The transistor array boasts transition frequencies of 150MHz for the NPN and 80MHz for the PNP. Integrated base resistors include values of 4.7kOhms and 22kOhms, with emitter base resistors at 4.7kOhms and 47kOhms, facilitating simplified circuit design. Minimum DC current gain (hFE) is specified at 20 for the NPN and 80 for the PNP at 5mA collector current and 10V Vce. The device has a maximum power dissipation of 125mW and is supplied on tape and reel. This component is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V / 80 @ 5mA, 10V |
| Frequency - Transition | 150MHz, 80MHz |
| Resistor - Base (R1) | 4.7kOhms, 22kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms, 47kOhms |
| Supplier Device Package | SSSMini6-F1 |
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