NP0G3D100A
TRANS PREBIAS NPN/PNP SSSMINI6Manufacturer: Panasonic Electronic Components
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Panasonic Electronic Components NP0G3D100A is a dual pre-biased bipolar transistor featuring one NPN and one PNP configuration within a SSSMini6-F1 package. This surface mount component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA. It boasts a transition frequency of 150MHz for the NPN and 80MHz for the PNP. Key specifications include a maximum power dissipation of 125mW and a saturation voltage of 250mV at 300µA collector current and 10mA collector current respectively. Integrated base resistors of 4.7kOhms and 47kOhms are present for both transistors, simplifying external biasing. This device is commonly utilized in consumer electronics and industrial automation applications. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 125mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V / 80 @ 5mA, 10V |
| Frequency - Transition | 150MHz, 80MHz |
| Resistor - Base (R1) | 4.7kOhms, 47kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms, 47kOhms |
| Supplier Device Package | SSSMini6-F1 |
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