2SC5632G0L
RF TRANS NPN 8V 1.1GHZ SMINI3-F2Manufacturer: Panasonic Electronic Components
Categories: Bipolar RF Transistors
Quality Control: Learn More
Panasonic Electronic Components NPN RF Transistor, part number 2SC5632G0L, is designed for high-frequency applications. This SMini3-F2 packaged component offers a collector-emitter breakdown voltage of 8V and a maximum collector current of 50mA. It achieves a transition frequency of 1.1GHz and dissipates up to 150mW of power. The DC current gain (hFE) is a minimum of 100 at 2mA and 4V. Operating at an elevated temperature of up to 150°C (TJ), this surface mount device is commonly utilized in wireless communication systems and consumer electronics. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2mA, 4V |
| Frequency - Transition | 1.1GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SMini3-F2 |
Request a Quote
Clients Also Buy
DSC9F0100L
RF TRANS NPN 10V 1.9GHZ SSMINI3
DMC904F00R
TRANSISTOR NPN 20V SSMINI6-F3-B
2SC563200L
RF TRANS NPN 8V 1.1GHZ SMINI3-G1
