2SC563200L
RF TRANS NPN 8V 1.1GHZ SMINI3-G1Manufacturer: Panasonic Electronic Components
Categories: Bipolar RF Transistors
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Panasonic Electronic Components 2SC563200L is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter voltage breakdown of 8V and a maximum collector current of 50mA, with a DC current gain (hFE) of 100 minimum at 2mA and 4V. Operating at a transition frequency of 1.1GHz, it delivers 150mW of power dissipation. The transistor is housed in a SMini3-G1 surface mount package, specifically the SC-70, SOT-323 variant, and is supplied on tape and reel. This device is suitable for use in wireless communication systems and other RF circuitry.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2mA, 4V |
| Frequency - Transition | 1.1GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SMini3-G1 |
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