onsemi MMBV109LT1 is a silicon epitaxial planar Schottky barrier diode designed for voltage-variable capacitance applications. This varactor diode offers a nominal capacitance of 3.3 pF at a reverse voltage of 4V, with a capacitance ratio (C0.5/C20) of 3.5. It features a low leakage current and a maximum reverse voltage of 30V, making it suitable for RF tuning circuits in mobile communications and consumer electronics. The device is packaged in a SOT-23 (TO-236AB) surface-mount package, provided on tape and reel. Its robust construction and electrical characteristics are well-suited for high-frequency applications requiring precise capacitance control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)