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H11G2W

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H11G2W

OPTOISO 5.3KV DARL W/BASE 6DIP

Manufacturer: onsemi

Categories: Transistor, Photovoltaic Output Optoisolators

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The onsemi H11G2W is a single-channel optoisolator featuring a Darlington output with base control. This device offers a high isolation voltage of 5300Vrms, making it suitable for applications requiring robust electrical separation. Key electrical characteristics include a minimum current transfer ratio of 1000% at 10mA forward current and a typical forward voltage of 1.3V at 60mA. The output stage is a Darlington transistor with a maximum Vce saturation of 1V and an output voltage rating of 80V. Turn-on and turn-off times are specified at 5µs and 100µs respectively. The H11G2W is housed in a 6-DIP through-hole package and operates within a temperature range of -55°C to 100°C. Its design and performance parameters make it a valuable component for power supply control, industrial automation, and general-purpose switching applications where reliable signal isolation is critical.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case6-DIP (0.400"", 10.16mm)
Output TypeDarlington with Base
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 100°C
Voltage - Forward (Vf) (Typ)1.3V
Input TypeDC
Current - Output / Channel-
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)1000% @ 10mA
Vce Saturation (Max)1V
Current Transfer Ratio (Max)-
Supplier Device Package6-DIP
Voltage - Output (Max)80V
Turn On / Turn Off Time (Typ)5µs, 100µs
Rise / Fall Time (Typ)-
Number of Channels1
Current - DC Forward (If) (Max)60 mA

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