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H11A817W

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H11A817W

OPTOISO 5.3KV TRANSISTOR 4DIP

Manufacturer: onsemi

Categories: Transistor, Photovoltaic Output Optoisolators

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The onsemi H11A817W is a high-voltage optoisolator featuring a transistor output. This single-channel device provides 5300Vrms isolation and is housed in a standard 4-DIP package suitable for through-hole mounting. It offers a high CTR of up to 600% at 5mA input current, with a minimum CTR of 50% at 5mA. The forward voltage (Vf) is typically 1.2V at 50mA forward current, with a maximum saturation voltage (Vce) of 200mV. Rated for operation between -55°C and 100°C, the H11A817W is commonly employed in power supply control, industrial automation, and telecommunications applications where robust electrical isolation is critical.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.400"", 10.16mm)
Output TypeTransistor
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 100°C
Voltage - Forward (Vf) (Typ)1.2V
Input TypeDC
Current - Output / Channel50mA
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)50% @ 5mA
Vce Saturation (Max)200mV
Current Transfer Ratio (Max)600% @ 5mA
Supplier Device Package4-DIP
Voltage - Output (Max)70V
Turn On / Turn Off Time (Typ)-
Rise / Fall Time (Typ)2.4µs, 2.4µs
Number of Channels1
Current - DC Forward (If) (Max)50 mA

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