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H11A817DW

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H11A817DW

OPTOISO 5.3KV TRANSISTOR 4DIP

Manufacturer: onsemi

Categories: Transistor, Photovoltaic Output Optoisolators

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The onsemi H11A817DW is a single-channel optoisolator featuring a transistor output. This component provides 5300Vrms of isolation, making it suitable for applications requiring robust galvanic isolation. It supports a DC input type and operates with a typical forward voltage of 1.2V at 50mA forward current. The output transistor can handle a maximum of 70V and a current of 50mA. Key performance metrics include a minimum current transfer ratio of 300% at 5mA and a maximum of 600% at 5mA. The device exhibits typical rise and fall times of 2.4µs. Packaged in a 4-DIP format for through-hole mounting, the H11A817DW is designed for operation across a wide temperature range of -55°C to 100°C. This optoisolator finds application in industrial automation, power supply control, and general-purpose signal isolation.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.400"", 10.16mm)
Output TypeTransistor
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 100°C
Voltage - Forward (Vf) (Typ)1.2V
Input TypeDC
Current - Output / Channel50mA
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)300% @ 5mA
Vce Saturation (Max)200mV
Current Transfer Ratio (Max)600% @ 5mA
Supplier Device Package4-DIP
Voltage - Output (Max)70V
Turn On / Turn Off Time (Typ)-
Rise / Fall Time (Typ)2.4µs, 2.4µs
Number of Channels1
Current - DC Forward (If) (Max)50 mA

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