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H11A817BW

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H11A817BW

OPTOISO 5.3KV TRANSISTOR 4DIP

Manufacturer: onsemi

Categories: Transistor, Photovoltaic Output Optoisolators

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The onsemi H11A817BW is a single-channel optoisolator featuring a transistor output. This component provides 5300Vrms of isolation, making it suitable for applications requiring robust electrical separation. It operates with a DC input and a 1.2V typical forward voltage. The output stage can handle up to 70V and a saturation voltage of 200mV maximum. The current transfer ratio (CTR) ranges from a minimum of 130% at 5mA input to a maximum of 260% at 5mA. With a maximum DC forward current (If) of 50mA, the output current capability is also 50mA. The device is housed in a 4-DIP package and is designed for through-hole mounting. Typical rise and fall times are 2.4µs. This optoisolator finds application in power supplies, industrial controls, and telecommunications equipment.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.400"", 10.16mm)
Output TypeTransistor
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 100°C
Voltage - Forward (Vf) (Typ)1.2V
Input TypeDC
Current - Output / Channel50mA
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)130% @ 5mA
Vce Saturation (Max)200mV
Current Transfer Ratio (Max)260% @ 5mA
Supplier Device Package4-DIP
Voltage - Output (Max)70V
Turn On / Turn Off Time (Typ)-
Rise / Fall Time (Typ)2.4µs, 2.4µs
Number of Channels1
Current - DC Forward (If) (Max)50 mA

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