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H11A817B300

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H11A817B300

OPTOISO 5.3KV TRANSISTOR 4DIP

Manufacturer: onsemi

Categories: Transistor, Photovoltaic Output Optoisolators

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The onsemi H11A817B300 is a single-channel optoisolator featuring a transistor output. This component offers a high isolation voltage of 5300Vrms, making it suitable for applications requiring robust electrical separation. Key specifications include a DC forward current of 50mA (max) and an output current capability of 50mA per channel. The current transfer ratio ranges from a minimum of 130% at 5mA to a maximum of 260% at 5mA. The H11A817B300 operates with a typical forward voltage of 1.2V and a maximum collector-emitter saturation voltage of 200mV. It is housed in a standard 4-DIP (0.300", 7.62mm) through-hole package, designed for surface-mount applications. This optoisolator is engineered for reliable performance across an operating temperature range of -55°C to 100°C. Typical rise and fall times are 2.4µs. This device finds utility in power supplies, industrial control systems, and telecommunications equipment.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Output TypeTransistor
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 100°C
Voltage - Forward (Vf) (Typ)1.2V
Input TypeDC
Current - Output / Channel50mA
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)130% @ 5mA
Vce Saturation (Max)200mV
Current Transfer Ratio (Max)260% @ 5mA
Supplier Device Package4-DIP
Voltage - Output (Max)70V
Turn On / Turn Off Time (Typ)-
Rise / Fall Time (Typ)2.4µs, 2.4µs
Number of Channels1
Current - DC Forward (If) (Max)50 mA

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