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H11A817B

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H11A817B

OPTOISO 5.3KV TRANSISTOR 4DIP

Manufacturer: onsemi

Categories: Transistor, Photovoltaic Output Optoisolators

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The onsemi H11A817B is a single-channel optoisolator featuring a transistor output. It provides 5300Vrms of isolation and is housed in a standard 4-DIP package, suitable for through-hole mounting. This device offers a high current transfer ratio, with a minimum CTR of 130% at 5mA and a maximum of 260% at 5mA. The forward voltage (Vf) is typically 1.2V with a maximum forward current (If) of 50mA. The output transistor exhibits a saturation voltage (Vce Sat) of 200mV maximum and can handle an output voltage of up to 70V. With typical rise and fall times of 2.4µs, the H11A817B is suitable for applications in industrial control, power supplies, and telecommunications. The component operates within a temperature range of -55°C to 100°C.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Output TypeTransistor
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 100°C
Voltage - Forward (Vf) (Typ)1.2V
Input TypeDC
Current - Output / Channel50mA
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)130% @ 5mA
Vce Saturation (Max)200mV
Current Transfer Ratio (Max)260% @ 5mA
Supplier Device Package4-DIP
Voltage - Output (Max)70V
Turn On / Turn Off Time (Typ)-
Rise / Fall Time (Typ)2.4µs, 2.4µs
Number of Channels1
Current - DC Forward (If) (Max)50 mA

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