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H11A817

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H11A817

OPTOISO 5.3KV TRANSISTOR 4DIP

Manufacturer: onsemi

Categories: Transistor, Photovoltaic Output Optoisolators

Quality Control: Learn More

The onsemi H11A817 is a single-channel optoisolator featuring a transistor output. This component provides 5300Vrms of isolation and is housed in a standard 4-DIP package. It is designed for through-hole mounting, with a typical forward voltage (Vf) of 1.2V at 5mA and a maximum forward current (If) of 50mA. The output transistor exhibits a Vce saturation of 200mV (Max) and can handle an output current of 50mA. The current transfer ratio (CTR) ranges from a minimum of 50% at 5mA to a maximum of 600% at 5mA. Rise and fall times are typically 2.4µs. This optoisolator is suitable for applications requiring robust electrical isolation, commonly found in industrial control, power supplies, and telecommunications equipment. It operates within a temperature range of -55°C to 100°C and is supplied in tubes.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Output TypeTransistor
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 100°C
Voltage - Forward (Vf) (Typ)1.2V
Input TypeDC
Current - Output / Channel50mA
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)50% @ 5mA
Vce Saturation (Max)200mV
Current Transfer Ratio (Max)600% @ 5mA
Supplier Device Package4-DIP
Voltage - Output (Max)70V
Turn On / Turn Off Time (Typ)-
Rise / Fall Time (Typ)2.4µs, 2.4µs
Number of Channels1
Current - DC Forward (If) (Max)50 mA

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