onsemi FDME910PZT-P is a P-Channel MOSFET with a drain-source voltage of 20V and a continuous drain current rating of 8A at an ambient temperature of 25°C. This device offers a power dissipation of 2.1W at TA=25°C. Designed for demanding applications, the FDME910PZT-P is suitable for power management solutions in automotive and industrial sectors. Its P-channel configuration and robust performance characteristics make it an efficient choice for switching and load control. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk