SMUN5235T1G-M02
TRANS PREBIAS NPN 50V SC70Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi SMUN5235T1G-M02 is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 202mW. The transistor is housed in an SC-70 (SOT323) package and offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. It includes an integrated base resistor (R1) of 2.2 kOhms and an emitter base resistor (R2) of 47 kOhms. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current. Designed for automotive applications, this device meets AEC-Q101 qualification standards and is supplied on tape and reel. It finds application in various automotive control and signal processing circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-70 (SOT323) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | AEC-Q101 |
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