SMUN5113T1G
TRANS PREBIAS PNP 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi SMUN5113T1G is a PNP, pre-biased bipolar junction transistor designed for surface mount applications. This AEC-Q101 qualified component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The internal base-emitter resistors are rated at 47 kOhms (R1) and 47 kOhms (R2), providing a typical DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. With a maximum power dissipation of 202 mW, it is suitable for automotive applications. The device is packaged in a compact SC-70-3 (SOT323) configuration and supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | AEC-Q101 |
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