SMUN2113T1G
TRANS PREBIAS PNP 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi SMUN2113T1G is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a Collector-Emitter Breakdown Voltage (Vce) of 50V and a maximum Collector Current (Ic) of 100mA. It offers a typical DC Current Gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. The integrated base resistors are R1 (47 kOhms) and R2 (47 kOhms), providing a simplified biasing configuration. The transistor's Vce(sat) is a maximum of 250mV at 300µA base current and 10mA collector current. Its maximum power dissipation is 230mW. Packaged in an SC-59 (TO-236-3, SOT-23-3) case and supplied on tape and reel, the SMUN2113T1G meets AEC-Q101 qualification standards, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 230 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | AEC-Q101 |
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