SMMUN2134LT1G-M01
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi SMMUN2134LT1G-M01 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This device features integrated base resistors (R1 = 22 kOhms, R2 = 47 kOhms) simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA, with a power dissipation capability of 246mW. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce(sat)) is specified at 250mV maximum for 1mA base current and 10mA collector current. With an AEC-Q101 qualification and automotive grade, this component is suitable for use in automotive electronics, industrial control systems, and consumer electronics where simplified biasing and space efficiency are critical. The SOT-23-3 (TO-236) package ensures compatibility with standard surface-mount manufacturing processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | AEC-Q101 |
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