SMMUN2111LT1G-M01
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi SMMUN2111LT1G-M01 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mounting in a SOT-23-3 (TO-236) package. This AEC-Q101 qualified component features integrated base resistors (R1=10kO, R2=10kO), simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a power dissipation capability of 246mW, it is suitable for applications requiring minimal power consumption. The saturation voltage is specified at 250mV (max) at 300µA base current and 10mA collector current. This device finds utility in automotive applications and other general-purpose switching and amplification circuits where a simplified biasing scheme is advantageous.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | AEC-Q101 |
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