NSVMUN5216T1G
NPN BIPOLAR DIGITAL TRANSISTOR (Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi NSVMUN5216T1G is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This AEC-Q101 qualified component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a power dissipation of 202 mW and a base resistor (R1) of 4.7 kOhms, it offers a minimum DC current gain (hFE) of 160 at 5 mA collector current and 10 V Vce. The saturation voltage (Vce Sat) is a maximum of 250 mV at 1 mA base current and 10 mA collector current. The SC-70-3 (SOT323) package is supplied in a Digi-Reel®. This transistor is utilized in automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Qualification | AEC-Q101 |
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