NSVMUN5116T1G-M02
TRANS PREBIAS PNP 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi NSVMUN5116T1G-M02 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mounting. This component offers a collector-emitter breakdown voltage (Vce) of 50 V and a maximum collector current (Ic) of 100 mA. The device features a typical base resistor (R1) of 4.7 kOhms, facilitating simplified circuit design. With a maximum power dissipation of 202 mW and a Vce(sat) of 250mV at 1mA base current and 10mA collector current, it is suitable for various switching and amplification applications. The minimum DC current gain (hFE) is rated at 160 at 5mA collector current and 10V Vce. Qualified to AEC-Q101 standards and featuring an automotive grade, the NSVMUN5116T1G-M02 is utilized in automotive electronics and general-purpose signal switching. It is supplied in an SC-70-3 (SOT323) package.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Qualification | AEC-Q101 |
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