NSVMUN2132T1G
PNP BIPOLAR DIGITAL TRANSISTOR (Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi NSVMUN2132T1G is a PNP bipolar digital transistor, pre-biased with integrated base resistors. This AEC-Q101 qualified component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 15 at 5 mA collector current and 10 V Vce. With a maximum power dissipation of 230 mW, it is suitable for surface mount applications in an SC-59 package. The internal base resistors are specified as 4.7 kOhms for both R1 and R2. Vce saturation is a maximum of 250 mV at 1 mA base current and 10 mA collector current. This component is commonly utilized in automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 230 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Qualification | AEC-Q101 |
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