NSVMMUN2132LT1G-M01
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi NSVMMUN2132LT1G-M01 is a PNP bipolar junction transistor featuring integrated base resistors for simplified circuit design. This AEC-Q101 qualified device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The pre-biased configuration includes a 4.7k Ohm base resistor (R1) and a 4.7k Ohm emitter base resistor (R2), providing a minimum DC current gain (hFE) of 15 at 5mA collector current and 10V collector-emitter voltage. With a maximum power dissipation of 246mW, it is suitable for surface mounting in a SOT-23-3 (TO-236) package. The NSVMMUN2132LT1G-M01 is commonly employed in automotive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Qualification | AEC-Q101 |
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