NSVMMUN2114LT3G
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi NSVMMUN2114LT3G is a PNP, pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a Collector-Emitter Breakdown Voltage (Vce) of 50V and a maximum Collector Current (Ic) of 100mA, with a power dissipation capability of 246mW. The integrated base resistors, R1 at 10 kOhms and R2 at 47 kOhms, facilitate simplified circuit design. With a minimum DC Current Gain (hFE) of 80 at 5mA and 10V, and a Vce Saturation of 250mV at 300µA and 10mA, this transistor is suitable for various switching and amplification tasks. The SOT-23-3 (TO-236) package ensures a compact footprint. Qualified to AEC-Q101 standards and designated as Automotive grade, the NSVMMUN2114LT3G is utilized in automotive electronics and other demanding applications. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | AEC-Q101 |
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